International Conference on Defects in Semiconductors (ICDS ) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors . It developed as a spin off from the International Conference on the Physics of Semiconductors , remaining a satellite meeting from the first conference on Radiation Effects in
Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16.[ 1] [ 2]
The most recent ICDS (the 32nd) was at Rehoboth Beach , Delaware , September 10-15th, 2023.[ 3] [ 4] [ 5]
The next ICDS (33) will be at the Fudan University , Shanghai between September 15-19th, 2025, and will include a tutorial day on the 14th.
Corbett Prize
The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett , one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers.[ 6]
Recipients
Year
Location
Awardee(s)
Notes
2023[ 3]
Rehoboth Beach , Delaware , United States Brendan McCullian
University of Cornell
Fangzhou Zhao
UCSB , Santa Barbara
2021
Oslo , Norway Robert Karsthof
Post-Doc at Centre for Materials Science and Nanotechnology Physics, University of Oslo (PhD in 2018)
2019[ 7]
Seattle , United States Kunal Mukherjee
UCSB , Santa Barbara
Christian Zimmermann
University of Oslo , Norway
2017
Matsue , Japan Liwen Sang,[ 8]
Independent scientist at National Institute for Materials Science , Japan (PhD in 2010)
Elena Pascal
Post-doctoral researcher , Material Science and Engineering, Carnegie Mellon , USA
2015
Espoo , Finland Thomas Auzelle,
Scientist at Paul Drude Institute in Berlin, Germany (PhD in 2015)
Jan E. Stehr
Assistant Prof at Linköping University (PhD in 2011)
2013
Bologna , Italy Daniel José da Silva
Post-Doc at KU Leuven (PhD in 2014)
2011
Nelson , New Zealand Ben Green
Research scientist at Element Six , UK (PhD in 2013)
2009
St Petersburg , Russia Yoshihiro Gohda
Professor at Tokyo Institute of Technology , Japan (PhD in 2003)
Pavel Petrov
Senior Scientist at Ioffe Institute , Russia (PhD in 2001)
2007
Albuquerque , United States Fadwa El-Mellouhi
Senior Scientist at Qatar Energy and Environment Research Institute , Qatar (PhD in 2006)
2005
Awaji Island , Japan Hannes Raebiger
Professor at Yokohama National University , Japan (PhD in 2006)
Savas Berber
Professor at Gebze Technical University , Turkey (PhD in 2004)
Sukit Limpijumnong
Professor at Suranaree University of Technology , Thailand (PhD in 2000)
2003
Aarhus , Denmark Naoki Fukata
Group leader at National Institute for Materials Science , Japan (PhD in 1998)
2001
Giessen , Germany Yong-Sung Kim
Principal Researcher at Korea Research Institute of Standards and Science , South Korea (PhD in 2002)
Benjamin Hourahine
Senior Lecturer at University of Strathclyde (PhD in 2000)
1999
California , United States Ant Ural
Professor at University of Florida (PhD in 2001)
1997
Aveiro , Portugal Joanne E. Gower
King's College London
Tomas Hallberg
Linköping University , Deputy Research Director at Swedish Defence Research Agency (PhD in 1995)
Tomi Mattila
Helsinki University of Technology , Senior Scientist at VTT Technical Research Centre of Finland (PhD in 1997)
1995
Sendai , Japan Yasunori Mochizuki
Vice President for Central Research Laboratories, NEC (PhD in 1987)
Kohei M. Itoh
Professor at Keio University , Japan (PhD in 1994)
Haller Prize
Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students.[ 9]
Recipients
Conference locations
The ICDS venue often rotates between locations in Europe, North America and the far East.
Conference name
Location
Dates
Proceedings
ICDS 34
Glasgow , Scotland 26–30 July 2027
ICDS 33 Fudan University , Shanghai China 15–19 September 2025
J. of Semiconductors
ICDS 32 Delaware , United States 10–15 September 2023
J. Appl. Phys.[ 10]
ICDS 31 Oslo , Norway 25–30 July 2021
J. Appl. Phys.[ 11]
ICDS 30 Seattle , United States 21–26 July 2019
J. Appl. Phys.[ 12]
ICDS 29 Matsue , Japan 31 July–4 August 2017
J. Appl. Phys.[ 13]
ICDS 28 Espoo , Finland 27–31 July 2015
J. Appl. Phys[ 14]
ICDS 27[ 15]
Bologna , Italy 21–26 July 2013
AIP Conference Proceedings[ 16]
ICDS 26 Nelson, New Zealand 17–22 July 2011
Physica B[ 17]
ICDS 25 St Petersburg , Russia 20–24 July 2009
Physica B[ 18]
ICDS 24[ 19]
Albuquerque , United States 22–37 July 2007
Physica B[ 20]
ICDS 23
Awaji Island , Japan 24–29 July 2005
Physica B[ 21]
ICDS 22
Århus , Denmark 28 July–1 August 2003
Physica B[ 22]
ICDS 21
Giessen , Germany 16–20 July 2001
Physica B[ 23]
ICDS 20
Berkeley, California , United States 26–30 July 1999
Physica B[ 24]
ICDS 19
Aveiro, Portugal 21–25 July 1997
Trans Tech[ 25]
ICDS 18
Sendai , Japan 23–28 July 1995
Trans Tech[ 26]
ICDS 17
Gmunden , Austria 18–23 July 1993
Trans Tech[ 27]
ICDS 16
Bethlehem, Pennsylvania , United States 22–26 July 1991
Trans Tech[ 28]
ICDS 15
Budapest , Hungary 22–26 August 1988
Trans Tech[ 29]
ICDS 14
Paris , France 18–22 August 1986
Trans Tech[ 30]
ICDS 13
Coronado, California , United States 12–17 August 1984
Metallurgical Society of AIME[ 31]
ICDS 12
Amsterdam , Netherlands 12 August–3 September 1982
Physica B+C[ 32]
ICDS 11
Oiso , Japan 8–11 September 1980
Institute of Physics Publishing[ 33]
ICDS 1
Gatlinburg, Tennessee , United States May 1959
J. Appl. Phys.[ 34]
The Gordon Research Conferences host a regular semiconductor defect meeting[ 35]
The Extended Defects in Semiconductors conference (EDS) is in alternating years to the ICDS.[ 36]
See also
References
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Retrieved 26 July 2019 .{{cite web }}: CS1 maint: archived copy as title (link )^ "Dr. Liwen Sang, MANA Independent Scientist Wins the Corbett Prize at ICDS 2017 Conference" . International Center for Materials Nanoarchitectonics . Retrieved 22 August 2018 .^ "Eugene E. Haller obituary" .^ "Defects in Semiconductors 2024" .^ "Defects in Semiconductors 2022" .^ "Defects in Semiconductors 2020" .^ Yamamoto, Tetsuya; Fujiwara, Yasufumi; Itoh, Kohei (30 April 2018). "Preface to Special Topic: Defects in Semiconductors" . Journal of Applied Physics . 123 (16): 161301. Bibcode :2018JAP...123p1301Y . doi :10.1063/1.5036660 ^ Tuomisto, Filip; Makkonen, Ilja (5 May 2016). "Preface to Special Topic: Defects in Semiconductors" . Journal of Applied Physics . 119 (18): 181301. Bibcode :2016JAP...119r1301T . doi :10.1063/1.4948578 ^ "ICDS 27 - Bologna 21-26 July 2013" . www.icds2013.eu . Archived from the original on 7 February 2014. Retrieved 13 January 2022 .^ Cavallini, Anna; Estreicher, Stefan (17 February 2015). "Preface: 27th International Conference on Defects in Semiconductors (ICDS-2013)". AIP Conference Proceedings . 1583 (1): 1. Bibcode :2014AIPC.1583....1C . doi :10.1063/1.4865592 . ^ Evans-Freeman, Jan; Vernon-parry, Karen; Allen, Martin (2012). "Preface". Physica B: Condensed Matter . 407 (15). Elsevier BV: xi. doi :10.1016/s0921-4526(12)00538-8 . ISSN 0921-4526 . ^ Bagraev, Nikolay T.; Emtsev, Vadim V.; Estreicher, Stefan K. (2009). "Preface". Physica B: Condensed Matter . 404 (23– 24). Elsevier BV: xix. Bibcode :2009PhyB..404D..19B . doi :10.1016/j.physb.2009.08.098 . ISSN 0921-4526 . ^ "ICDS-24 : International Conference on Defects in Semiconductors, 2007" . Archived from the original on 7 December 2008. Retrieved 7 December 2008 .^ Estreicher, Stefan K.; Holtz, Mark W.; Seager, Carleton H.; Wright, Alan F. (2007). "Preface and acknowledgements". Physica B: Condensed Matter . 401– 402. Elsevier BV: xvii. Bibcode :2007PhyB..401D..17E . doi :10.1016/j.physb.2007.08.100 . ISSN 0921-4526 . ^ Oshiyama, A.; Maeda, K.; Itoh, K.M.; Katayama-Yoshida, H. (1 April 2006). "Proceedings of the 23rd International Conference on Defects in Semiconductors" . Physica B . 376– 377. doi :10.1016/j.physb.2005.12.003 . ^ "Preface and acknowledgements". Physica B: Condensed Matter . 340– 342. Elsevier BV: vii– viii. 2003. Bibcode :2003PhyB..340D...7. . doi :10.1016/j.physb.2003.10.009 . ISSN 0921-4526 . ^ (ICDS-21) (16 July 2001). "Physica B: Condensed Matter | International Conference on Defects in Semiconductors (ICDS-21)" . Science Direct Elsevier . Retrieved 25 August 2022 . {{cite web }}: CS1 maint: numeric names: authors list (link )^ Stavola, Michael (1999). "To 40 years of defects in semiconductors: may the problem never be solved!". Physica B: Condensed Matter . 273– 274. Elsevier BV: 1– 6. Bibcode :1999PhyB..273....1S . doi :10.1016/s0921-4526(99)00725-5 . ISSN 0921-4526 . ^ Davies, Gordon; Nazaré, Maria Helena, eds. (1997). Defects in Semiconductors 19 ISBN 9780878497867 . Retrieved 26 July 2021 . ^ Suezawa, M.; Katayama-Yoshida, H., eds. (1995). Defects in Semiconductors 18 ISBN 9780878497164 . Retrieved 26 July 2021 . ^ Heinrich, Helmut; Jantsch, Wolfgang, eds. (1994). Defects in Semiconductors 17 ISBN 9780878496716 . Retrieved 26 July 2021 . ^ Davies, Gordon; DeLeo, G. G.; Stavola, M., eds. (1992). Defects in Semiconductors 16 ISBN 9780878496280 . Retrieved 26 July 2021 . ^ Ferenczi, G., ed. (1989). Defects in Semiconductors 15 ISBN 9780878495849 . Retrieved 26 July 2021 . ^ von Bardeleben, H. J., ed. (1986). Defects in Semiconductors 14 ISBN 9780878495511 . Retrieved 26 July 2021 . ^ Kimerling, L. C.; Parsey, J. M., eds. (1985). Thirteenth International Conference on Defects in Semiconductors . Metallurgical Society of AIME. ISBN 9780895204851 ^ Kimerling, L. C. (1983). "Defects in semiconductors - 1982". 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